Marcin Kępa^1*, Niels Focke^2*, Łukasz Cywiński^1*, Jan A. Krzywda^1,3*

1 Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL 02-668 Warsaw, Poland

2 JARA-FIT Institute for Quantum Information, Forschungszentrum Jülich GmbH and RWTH Aachen University, Aachen, Germany

3 Lorentz Institute and Leiden Institute of Advanced Computer Science, Leiden University, P.O. Box 9506, 2300 RA Leiden, The Netherlands

* Corresponding authors emails: marcin.kepa@nbi.ku.dk, niels.focke@rwth-aachen.de, lcyw@ifpan.edu.pl, j.a.krzywda@liacs.leidenuniv.nl

DOI10.24435/materialscloud:mx-0w [version v1]

Publication date: Aug 07, 2024

How to cite this record

Marcin Kępa, Niels Focke, Łukasz Cywiński, Jan A. Krzywda, Simulation of 1/f charge noise affecting a quantum dot in a Si/SiGe structure, Materials Cloud Archive 2024.118 (2024), https://doi.org/10.24435/materialscloud:mx-0w

Description

Due to presence of magnetic field gradient needed for coherent spin control, dephasing of single-electron spin qubits in silicon quantum dots is often dominated by 1/f charge noise. We investigate theoretically fluctuations of ground state energy of an electron in gated quantum dot in realistic Si/SiGe structure. We assume that the charge noise is caused by motion of charges trapped at the semiconductor-oxide interface. We consider a realistic range of trapped charge densities, ρ∼10¹⁰ cm⁻², and typical lenghtscales of isotropically distributed displacements of these charges, δr≤1 nm, and identify pairs (ρ,δr) for which the amplitude and shape of the noise spectrum is in good agreement with spectra reconstructed in recent experiments on similar structures.

Materials Cloud sections using this data

Files

File name	Size	Description
data_simulation1f.zip MD5md5:0bf56f3b6c4916b54b8e5e32e90dae66	26.3 MiB	Code and data for regenerating figures and findings of the paper
README.md MD5md5:692d7a4898d9e98e7341865550216f2f	1021 Bytes	Readme file

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External references

Keywords

Quantum dots Simulation Charge noise