Simulation of 1/f charge noise affecting a quantum dot in a Si/SiGe structure

Dublin Core Export

<?xml version='1.0' encoding='utf-8'?>
<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:creator>Kępa, Marcin</dc:creator>
  <dc:creator>Focke, Niels</dc:creator>
  <dc:creator>Cywiński, Łukasz</dc:creator>
  <dc:creator>Krzywda, Jan A.</dc:creator>
  <dc:date>2024-08-07</dc:date>
  <dc:description>Due to presence of magnetic field gradient needed for coherent spin control, dephasing of single-electron spin qubits in silicon quantum dots is often dominated by 1/f charge noise. We investigate theoretically fluctuations of ground state energy of an electron in gated quantum dot in realistic Si/SiGe structure. We assume that the charge noise is caused by motion of charges trapped at the semiconductor-oxide interface. We consider a realistic range of trapped charge densities, ρ∼10¹⁰ cm⁻², and typical lenghtscales of isotropically distributed displacements of these charges, δr≤1 nm, and identify pairs (ρ,δr) for which the amplitude and shape of the noise spectrum is in good agreement with spectra reconstructed in recent experiments on similar structures.</dc:description>
  <dc:identifier>https://materialscloud-archive-failover.cineca.it/record/2024.118</dc:identifier>
  <dc:identifier>doi:10.24435/materialscloud:mx-0w</dc:identifier>
  <dc:identifier>mcid:2024.118</dc:identifier>
  <dc:identifier>oai:materialscloud.org:2286</dc:identifier>
  <dc:language>en</dc:language>
  <dc:publisher>Materials Cloud</dc:publisher>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>Creative Commons Attribution 4.0 International https://creativecommons.org/licenses/by/4.0/legalcode</dc:rights>
  <dc:subject>Quantum dots</dc:subject>
  <dc:subject>Simulation</dc:subject>
  <dc:subject>Charge noise</dc:subject>
  <dc:title>Simulation of 1/f charge noise affecting a quantum dot in a Si/SiGe structure</dc:title>
  <dc:type>Dataset</dc:type>
</oai_dc:dc>