Jiaqi Zhou^1*, Samuel Poncé², Jean-Christophe Charlier¹

1 Institute of Condensed Matter and Nanosciences (IMCN), Université catholique de Louvain (UCLouvain), B-1348, Louvain-la-Neuve, Belgium

2 European Theoretical Spectroscopy Facility, Institute of Condensed Matter and Nanosciences (IMCN), Université catholique de Louvain (UCLouvain), B-1348, Louvain-la-Neuve, Belgium

* Corresponding authors emails: jiaqi.zhou@uclouvain.be

DOI10.24435/materialscloud:z5-xz [version v1]

Publication date: Aug 25, 2023

How to cite this record

Jiaqi Zhou, Samuel Poncé, Jean-Christophe Charlier, Enhanced spin Hall ratio in two-dimensional III-V semiconductors, Materials Cloud Archive 2023.131 (2023), https://doi.org/10.24435/materialscloud:z5-xz

Description

Spin Hall effect (SHE) plays a critical role in spintronics since it can convert charge current to spin current. Using state-of-the-art ab initio calculations including quadrupole and spin-orbit coupling, the charge and spin transports have been investigated in pristine and doped two-dimensional (2D) III-V semiconductors. Valence bands induce a strong scattering which limits charge conductivity in the hole-doped system, where spin Hall conductivity is enhanced by the spin-orbit splitting, yielding an ultrahigh spin Hall ratio 𝜉≈0.9 in GaAs monolayer at room temperature.

Materials Cloud sections using this data

Files

File name	Size	Description
io_files.tar.gz MD5md5:26ddabcde04e3c86021f42b0fc14aff3	226.5 MiB	Input and output files of calculations. Details can be found in README.txt.

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External references

Keywords

Quantum ESPRESSO Wannier functions two-dimensional spin Hall effect transport