You are currently on a failover version of the Materials Cloud Archive hosted at CINECA, Italy.
Click here to access the main Materials Cloud Archive.
Note: If the link above redirects you to this page, it means that the Archive is currently offline due to maintenance. We will be back online as soon as possible.
This version is read-only: you can view published records and download files, but you cannot create new records or make changes to existing ones.

The effects of size and strain on the electronic behavior of AlN/GaN heterojunction

Dublin Core Export

<?xml version='1.0' encoding='utf-8'?>
<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:creator>Lei, Qianjin</dc:creator>
  <dc:date>2024-11-20</dc:date>
  <dc:description>The electronic behavior of AlN/GaN heterojunction is investigated at thicknesses of 1.2~4.2 nm and biaxial strain of -8%~8% based on density functional theory. The structural stability, charge distribution, electronic properties, and transport properties of the cells reveal the enhancing effects of size and strain. With the thickness decreases, the bandgap values of the cells, as low as -0.387 eV, confirm the transition in structural nature, while the individual atomic layers remain bandgaps of at least 0.3 eV in DOS. The carrier mobility enhances to 2×1012  m2/V/s. The cell with 1.2 nm thickness is weakened by 50% due to the quantum confinement effect.  Under compressive strain ranging from -8% to 0%, the characteristics of heterojunctions are enhanced by an order of magnitude, in contrast, under 0%~8% tensile strain, the cells decrease slightly but for 2L cells.</dc:description>
  <dc:identifier>https://materialscloud-archive-failover.cineca.it/record/2024.184</dc:identifier>
  <dc:identifier>doi:10.24435/materialscloud:32-q6</dc:identifier>
  <dc:identifier>mcid:2024.184</dc:identifier>
  <dc:identifier>oai:materialscloud.org:2448</dc:identifier>
  <dc:language>en</dc:language>
  <dc:publisher>Materials Cloud</dc:publisher>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>Creative Commons Attribution Non Commercial 4.0 International https://creativecommons.org/licenses/by-nc/4.0/legalcode</dc:rights>
  <dc:subject>BandGap</dc:subject>
  <dc:subject>Heterojunction</dc:subject>
  <dc:subject>strain</dc:subject>
  <dc:title>The effects of size and strain on the electronic behavior of AlN/GaN heterojunction</dc:title>
  <dc:type>Dataset</dc:type>
</oai_dc:dc>