You are currently on a failover version of the Materials Cloud Archive hosted at CINECA, Italy.
Click here to access the main Materials Cloud Archive.
Note: If the link above redirects you to this page, it means that the Archive is currently offline due to maintenance. We will be back online as soon as possible.
This version is read-only: you can view published records and download files, but you cannot create new records or make changes to existing ones.

Influence of carrier-carrier interactions on the sub-threshold swing of band-to-band tunnelling transistors


JSON Export

{
  "updated": "2024-10-08T10:45:47.296279+00:00", 
  "metadata": {
    "_oai": {
      "id": "oai:materialscloud.org:2378"
    }, 
    "version": 1, 
    "is_last": true, 
    "_files": [
      {
        "size": 1512172334, 
        "checksum": "md5:ffa52a929beaf98590820eb96f3ef6e3", 
        "key": "Review_data_MARVEL.zip", 
        "description": "Folder containing the DFT, Wannierisation, quantum transport input and output data."
      }, 
      {
        "size": 425, 
        "checksum": "md5:7c6780a9fd7bcb755f0eed17627b4f21", 
        "key": "README.md", 
        "description": "README file describing the contents of the folder"
      }
    ], 
    "keywords": [
      "electronic structure", 
      "transport", 
      "Wannier functions"
    ], 
    "description": "Band-to-band tunnelling field-effect transistors (TFETs) have long been considered as promising candidates for future low-power logic applications. However, fabricated TFETs rarely reach sub-60 mV/dec sub-threshold swings (SS) at room temperature. Previous theoretical studies identified Auger processes as possible mechanisms for the observed degradation of SS. Through first-principles quantum transport simulations incorporating carrier-carrier interactions within the Non-equilibrium Green's Function formalism through self-consistent GW approximation, we confirm here that Auger processes are indeed at least partly responsible for the poor performance of TFETs. Using a carbon nanotube TFET as testbed, we show that carrier-carrier scattering alone significantly increases the OFF-state current of these devices, thus worsening their sub-threshold behavior. The results are in the folder uploaded.", 
    "contributors": [
      {
        "affiliations": [
          "Integrated Systems Laboratory, ETH Z\u00fcrich, Gloriastrasse 35, 8092 Z\u00fcrich, Switzerland"
        ], 
        "givennames": "Chen Hao", 
        "email": "chexia@iis.ee.ethz.ch", 
        "familyname": "Xia"
      }, 
      {
        "affiliations": [
          "Integrated Systems Laboratory, ETH Z\u00fcrich, Gloriastrasse 35, 8092 Z\u00fcrich, Switzerland"
        ], 
        "givennames": "Leonard", 
        "email": "dleonard@iis.ee.ethz.ch", 
        "familyname": "Deuschle"
      }, 
      {
        "affiliations": [
          "Integrated Systems Laboratory, ETH Z\u00fcrich, Gloriastrasse 35, 8092 Z\u00fcrich, Switzerland"
        ], 
        "givennames": "Jiang", 
        "email": "jiacao@iis.ee.ethz.ch", 
        "familyname": "Cao"
      }, 
      {
        "affiliations": [
          "Integrated Systems Laboratory, ETH Z\u00fcrich, Gloriastrasse 35, 8092 Z\u00fcrich, Switzerland"
        ], 
        "givennames": "Alexander", 
        "email": "almaeder@student.ethz.ch", 
        "familyname": "Maeder"
      }, 
      {
        "affiliations": [
          "Integrated Systems Laboratory, ETH Z\u00fcrich, Gloriastrasse 35, 8092 Z\u00fcrich, Switzerland"
        ], 
        "givennames": "Mathieu", 
        "email": "mluisier@iis.ee.ethz.ch", 
        "familyname": "Luisier"
      }
    ], 
    "edited_by": 576, 
    "owner": 1514, 
    "doi": "10.24435/materialscloud:sm-90", 
    "title": "Influence of carrier-carrier interactions on the sub-threshold swing of band-to-band tunnelling transistors", 
    "license": "Creative Commons Attribution 4.0 International", 
    "mcid": "2024.149", 
    "id": "2378", 
    "conceptrecid": "2377", 
    "status": "published", 
    "publication_date": "Oct 08, 2024, 12:45:47", 
    "license_addendum": null, 
    "references": [
      {
        "comment": "Related paper for this data", 
        "type": "Journal reference", 
        "url": "https://ieeexplore.ieee.org/document/10565899", 
        "doi": "10.1109/LED.2024.3417307", 
        "citation": "C. H. Xia, L. Deuschle, J. Cao, A. Maeder and M. Luisier, \"Influence of Carrier\u2013Carrier Interactions on the Sub-Threshold Swing of Band-to-Band Tunnelling Transistors,\" in IEEE Electron Device Letters, vol. 45, no. 8, pp. 1504-1507, Aug. 2024"
      }
    ]
  }, 
  "id": "2378", 
  "revision": 7, 
  "created": "2024-10-03T13:20:23.331651+00:00"
}