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Publication date: Dec 09, 2024
A machine-learned interatomic potential for Ge-rich GexTe alloys has been developed aiming at uncovering the kinetics of phase separation and crystallization in these materials. The results are of interest for the operation of embedded phase change memories which exploits Ge-enrichment of GeSbTe alloys to raise the crystallization temperature. The potential is generated by fitting a large database of energies and forces computed within Density Functional Theory with the neural network scheme implemented in the DeePMD-kit package. The potential is highly accurate and suitable to describe the structural and dynamical properties of the liquid, amorphous and crystalline phases of the wide range of compositions from pure Ge and stoichiometric GeTe to the Ge-rich Ge₂Te alloy. Large scale molecular dynamics simulations revealed a crystallization mechanism which depends on temperature. At 600 K, segregation of most of Ge in excess was observed to occur on the ns time scale followed by crystallization of nearly stoichiometric GeTe regions. At 500 K, nucleation of crystalline GeTe was observed to occur before phase separation, followed by a slow crystal growth due to the concurrent expulsion of Ge in excess.
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File name | Size | Description |
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NN_Potential_Ge-rich_GeTe.zip
MD5md5:39680a385503c39326f99bc6871d5c71
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26.2 MiB | DeePMD potential for Ge-rich GeTe |
Database.zip
MD5md5:65df1be2123053a63097d14d6e8390a5
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747.9 MiB | The DFT database used to fit the NN potential consists of configurations of Ge, GeTe and Ge-rich GeTe (Ge2Te, Ge3Te and Ge9Te) divided into crystalline, amorphous, liquid and supercooled liquid phases. The configurations of Ge2Te are further divided into configurations in a 100-atom cell (Ge2Te_100), exotic high-energy configurations (Ge2Te_Ex and Ge2Te_Ex2) and a-Ge/a-GeTe interface configurations in a 300-atom cell (Ge2Te_Int) as described in the paper. |
video.zip
MD5md5:fe2932d060c19beb81664b765f1be387
|
965.7 MiB | Videos of the crystallization process at 600 K and 500 K of Ge2Te and GeTe, of the phase separation process of Ge2Te at 600 K and of the annealing at 1200 K of the phase segregated and crystallized model of Ge2Te |
trajectories.zip
MD5md5:20e3ac317ccea43408f67cb3b6935fff
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1.3 GiB | Trajectories files of the crystallization process at 600 K and 500 K of Ge2Te and GeTe and of the annealing at 1200 K of the phase segregated and crystallized model of Ge2Te |
2024.195 (version v1) [This version] | Dec 09, 2024 | DOI10.24435/materialscloud:cf-tq |