## Description The ab initio Boltzmann transport equation (BTE) is employed to calculate phonon-limited mobilities for selected 12 2D semiconductors plus 4 other relevant ones. For the top candidate, monolayer WS2, we also consider higher level of accuracy by including GW band structure corrections, high doping concentration and quadrupole for long-range electron-phonon interaction. ## Contents All needed input files for BTE are provided for 16 materials [npj Comput Mater 10, 229 (2024); DOI: 10.1038/s41524-024-01417-0]. List of directories: 01_Sb 02_SiH 03_Tl2O 04_Bi2TeSe2 05_GeSe 06_SnTe 07_ZrSe2 08_HfSe2 09_TiNCl 10_TiNBr 11_WS2 11_WS2_GW 11_WS2_GW_quad 12_WTe2 13_MoS2 14_Bi 15_GeS 16_WSe2